HENSOLDT has signed a long-term semiconductor supply agreement with United Monolithic Semiconductors (UMS) to secure critical components for its radar systems through 2030.
Under the deal, UMS will deliver 900,000 gallium nitride (GaN) semiconductor components, used in the transmit and receive modules of HENSOLDT’s radars.
These components are central to improving radar performance, enabling higher power output, better range, and greater energy efficiency in demanding environments.
The companies are jointly developing and testing the semiconductors, which will be integrated into systems such as the Spexer radar family.
HENSOLDT chief financial officer Christian Ladurner said the deal comes as “demand for high-performance sensor solutions [grows] significantly worldwide.”
“To ensure we can reliably supply our customers, we are systematically expanding our production capacities whilst simultaneously securing our supply chains,” he said.
GaN Investments Accelerate
Defense programs worldwide are ramping up investment in GaN technology, which has become critical for next-generation radar and electronic warfare systems.
In 2024, Lockheed Martin expanded its use of GaN-based transmitters in missile defense radars, improving detection range and tracking accuracy for ballistic threats. The shift to GaN allows systems to operate at higher power levels while maintaining efficiency.
Europe has also pushed to build domestic GaN capabilities. In 2026, Indra invested in semiconductor initiatives aimed at producing GaN chips locally, part of a broader effort to strengthen technological sovereignty in radar and communications systems.
Thales has also integrated GaN technology into its latest radar systems, enhancing performance in air surveillance and naval applications across European defense programs.
